TK39J60W,S1VQ
- 型號描述:
- MOSFET N-Ch 38.8A 270W FET 600V 4100pF 110nC
- 型號:
- TK39J60W,S1VQ
- 品牌:
- Toshiba
- 交期:
- 5-8工作天
- 原廠包裝量:
- 25
- 幣別 (NTD)稅前單價/PCS
- 點擊查看即時庫存
| 1+ | NT$348.4163 |
| 10+ | NT$314.9738 |
| 25+ | NT$299.9588 |
| 100+ | NT$260.3738 |
起訂量：1倍增量：1
價格:NT$348.4163數量:
合計:NT$348
- Series
- DTMOSIV
- Packaging
- Tube
- Part Status
- Active
- FET Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 600V
- Current - Continuous Drain (Id) @ 25°C
- 38.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Rds On (Max) @ Id, Vgs
- 65mOhm @ 19.4A, 10V
- Vgs(th) (Max) @ Id
- 3.7V @ 1.9mA
- Gate Charge (Qg) (Max) @ Vgs
- 110nC @ 10V
- Vgs (Max)
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds
- 4100pF @ 300V
- FET Feature
- Super Junction
- Power Dissipation (Max)
- 270W (Tc)
- Operating Temperature
- 150°C (TJ)
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-3P(N)
- Package / Case
- TO-3P-3, SC-65-3
- 精選品牌
- 熱銷產品
- BM09B-XASS-TF
- RC1206FR-10680RL
- EV2759-Q-01A
- 0194320014
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- DMPH6250S-7
- VN340SPTR-33-E
- 19307160738
- 19307160428
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- TPS7B8333QDCYRQ1
- MB10M
- NUP2201MR6T1G
- ZXTR2112F-7
- GRM155R71H122KA01D
- RC0603FR-071M1L
- HSS-B20-0508H-01S
- ANT-5GW-MMG1-SMA-1
- BZX84C6V8LT1G
- RC320-12
- RC320-12
- MS27472T10F5S
- AZC399-04S
- RC0100FR-075R1L
- RC0100FR-073RL
- BAP70-02,115
- AZ1143-04F
- AZ1123-04F
- GT32-10S-SP
- GT32-10S-6CF
- GT32-10S-HU
- 2045321001
- 0010844020
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- 770442-1
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