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STGWT40H65DFB
影像僅供參考,以產品規格為準

STGWT40H65DFB

型號描述:
IGBT 電晶體 650V 40A HSpd trench gate field-stop IGB
型號:
STGWT40H65DFB
品牌:
STMicroelectronics
交期:
5-8工作天
原廠包裝量:
300
起訂量:1倍增量:1
價格:NT$0數量:

合計:NT$0

Series
-
Packaging
Tube
Part Status
Active
IGBT Type
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)
650V
Current - Collector (Ic) (Max)
80A
Current - Collector Pulsed (Icm)
160A
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 40A
Power - Max
283W
Switching Energy
498µJ (on), 363µJ (off)
Input Type
Standard
Gate Charge
210nC
Td (on/off) @ 25°C
40ns/142ns
Test Condition
400V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr)
62ns
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3P
Base Part Number
STGWT40
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